Now showing items 1-2 of 2

    • High temperature stability of nitride-based power HEMTs 

      Konferenzveröffentlichung
      Maier, David; Alomari, Mohammed; Kohn, Erhard; Diforte-Poisson, Marie-Antoinette; Dua, Christian; Delage, Sylvain L.; Grandjean, Nicolas; Carlin, Jean-Francois; Chuvilin, Andrey; Kaiser, Ute; Troadec, David; Gaquière, Christophe
      The temperature stability of InAlN/GaN heterostructure FETs has been tested by a stepped temperature test routine under large signal operation conditions. Devices have been successfully operated up to 900 °C for 50 hrs. ...
    • Testing the temperature limits of GaN-based HEMT devices 

      Wissenschaftlicher Artikel
      Maier, David; Alomari, Mohammed; Grandjean, Nicolas; Carlin, Jean-Francois; Diforte-Poisson, Marie-Antoinette; Dua, Christian; Chuvilin, Andrey; Troadec, David; Gaquière, Christophe; Kaiser, Ute; Delage, Sylvain L.; Kohn, Erhard
      The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility ...