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    • The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs 

      Beitrag zu einer Konferenz
      Hosch, Michael; Behtash, Reza; Thorpe, James R.; Held, Stefanie; Blanck, Hervé; Riepe, Klaus J.; Schumacher, Hermann
      An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, ...