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AutorMaier, Daviddc.contributor.author
AutorAlomari, Mohammeddc.contributor.author
AutorGrandjean, Nicolasdc.contributor.author
AutorCarlin, Jean-Francoisdc.contributor.author
AutorDiforte-Poisson, Marie-Antoinettedc.contributor.author
AutorDua, Christiandc.contributor.author
AutorChuvilin, Andreydc.contributor.author
AutorTroadec, Daviddc.contributor.author
AutorGaquière, Christophedc.contributor.author
AutorKaiser, Utedc.contributor.author
AutorDelage, Sylvain L.dc.contributor.author
AutorKohn, Erharddc.contributor.author
Aufnahmedatum2016-03-15T06:22:57Zdc.date.accessioned
In OPARU verfügbar seit2016-03-15T06:22:57Zdc.date.available
Jahr der Erstellung2010dc.date.created
ZusammenfassungThe high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 °C, InAlN/GaN HEMTs have been operated up to 900 °C for 50 hrs (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.dc.description.abstract
Spracheendc.language.iso
Verbreitende StelleUniversität Ulmdc.publisher
ID Originalpublikationhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5570933&isnumber=5703169dc.relation.uri
LizenzStandard (Fassung vom 01.10.2008)dc.rights
Link zum Lizenztexthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
SchlagwortGaN heterostructuresdc.subject
SchlagwortHigh-temperature electronicsdc.subject
SchlagwortInAlN/GaN high-electron mobility transistor (HEMT)dc.subject
DDC-SachgruppeDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHModulation-doped field-effect transistorsdc.subject.lcsh
LCSHReliability: Engineeringdc.subject.lcsh
TitelTesting the temperature limits of GaN-based HEMT devicesdc.title
RessourcentypWissenschaftlicher Artikeldc.type
DOIhttp://dx.doi.org/10.18725/OPARU-1749dc.identifier.doi
PPN340238445dc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-75424dc.identifier.urn
GNDHEMTdc.subject.gnd
FakultätFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Quelle OriginalpublikationIEEE Transactions on device and material reliability 10 (2010), S. 427 - 436uulm.citationOrigPub
Datum der Freischaltung2011-02-06T23:13:47Zuulm.freischaltungVTS
Peer-Reviewjauulm.peerReview
DCMI MedientypTextuulm.typeDCMI
VTS-ID7542uulm.vtsID
KategoriePublikationenuulm.category


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