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AuthorMaier, Daviddc.contributor.author
AuthorAlomari, Mohammeddc.contributor.author
AuthorGrandjean, Nicolasdc.contributor.author
AuthorCarlin, Jean-Francoisdc.contributor.author
AuthorDiforte-Poisson, Marie-Antoinettedc.contributor.author
AuthorDua, Christiandc.contributor.author
AuthorChuvilin, Andreydc.contributor.author
AuthorTroadec, Daviddc.contributor.author
AuthorGaquière, Christophedc.contributor.author
AuthorKaiser, Utedc.contributor.author
AuthorDelage, Sylvain L.dc.contributor.author
AuthorKohn, Erharddc.contributor.author
Date of accession2016-03-15T06:22:57Zdc.date.accessioned
Available in OPARU since2016-03-15T06:22:57Zdc.date.available
Year of creation2010dc.date.created
AbstractThe high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 °C, InAlN/GaN HEMTs have been operated up to 900 °C for 50 hrs (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
ID of original publ.http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5570933&isnumber=5703169dc.relation.uri
LicenseStandard (Fassung vom 01.10.2008)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
KeywordGaN heterostructuresdc.subject
KeywordHigh-temperature electronicsdc.subject
KeywordInAlN/GaN high-electron mobility transistor (HEMT)dc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHModulation-doped field-effect transistorsdc.subject.lcsh
LCSHReliability: Engineeringdc.subject.lcsh
TitleTesting the temperature limits of GaN-based HEMT devicesdc.title
Resource typeWissenschaftlicher Artikeldc.type
DOIhttp://dx.doi.org/10.18725/OPARU-1749dc.identifier.doi
PPN1650895151dc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-75424dc.identifier.urn
GNDHEMTdc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Citation of original publ.IEEE Transactions on device and material reliability 10 (2010), S. 427 - 436uulm.citationOrigPub
Date of activation2011-02-06T23:13:47Zuulm.freischaltungVTS
Peer reviewjauulm.peerReview
DCMI TypeTextuulm.typeDCMI
VTS-ID7542uulm.vtsID
CategoryPublikationenuulm.category


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