Testing the temperature limits of GaN-based HEMT devices
Wissenschaftlicher Artikel
Autoren
Maier, David
Alomari, Mohammed
Grandjean, Nicolas
Carlin, Jean-Francois
Diforte-Poisson, Marie-Antoinette
Fakultäten
Fakultät für Ingenieurwissenschaften und InformatikPeer-Review
ja
Zusammenfassung
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 °C, InAlN/GaN HEMTs have been operated up to 900 °C for 50 hrs (in vacuum). Failure is thought to be still contact metallization
stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.
Erstellung / Fertigstellung
2010
Originalpublikation
IEEE Transactions on device and material reliability 10 (2010), S. 427 - 436http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5570933&isnumber=5703169
Normierte Schlagwörter
HEMT [GND]Modulation-doped field-effect transistors [LCSH]
Reliability: Engineering [LCSH]
Schlagwörter
GaN heterostructures; High-temperature electronics; InAlN/GaN high-electron mobility transistor (HEMT)DDC-Sachgruppe
DDC 620 / Engineering & allied operationsMetadata
Zur LanganzeigeZitiervorlage
Maier, David et al. (2011): Testing the temperature limits of GaN-based HEMT devices. Open Access Repositorium der Universität Ulm. http://dx.doi.org/10.18725/OPARU-1749