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AuthorSchleicher, Bernddc.contributor.author
AuthorSchumacher, Hermanndc.contributor.author
Date of accession2016-03-15T06:22:55Zdc.date.accessioned
Available in OPARU since2016-03-15T06:22:55Zdc.date.available
Year of creation2010dc.date.created
AbstractThis paper presents a monolithic impulse generator IC targeting the spectral mask for ultra-wideband applications allocated in the European Union. The multicycle impulse is based on a spike triggered resonant circuit and has a peak to peak output amplitude of 32 mV and a time domain extension of 0.83 ns (full width at half maximum). It can generate single pulses as well as repetition rates exceeding the 200 MHz shown in this paper. The IC includes a conversion stage, which can generate the triggering spike from a low slew rate signal. The IC is fabricated in a Si/SiGe HBT production technology, has a power consumption of 58.6 mW at 200 MHz repetition rate and an on-chip area of 480 x 880 µm², both including the conversion stage. Based on the time domain measurement a model of the impulse transient for the use in system simulations is also presented. The model equation applies a summation of two Gaussian bell shapes as the envelope function, which is multiplied with a phase-corrected sinusoidal waveform to arrive at the final shape.dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
ID of original publ.http://dx.doi.org/10.1109/SMIC.2010.5422846dc.relation.uri
LicenseStandard (Fassung vom 01.10.2008)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
KeywordEuropean UWB maskdc.subject
KeywordImpulse generatordc.subject
KeywordImpulse radiodc.subject
KeywordIR-UWBdc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHUltra-wideband devicesdc.subject.lcsh
TitleImpulse generator targeting the European UWB maskdc.title
Resource typeBeitrag zu einer Konferenzdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-1739dc.identifier.doi
PPN1651371423dc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-74429dc.identifier.urn
GNDImpulsradiodc.subject.gnd
GNDUltraweitbanddc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Citation of original publ.Proceedings IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010), New Orleans, LA, USA, Jan. 11 - 13, 2010, S. 21 - 24uulm.citationOrigPub
Date of activation2010-11-25T16:42:58Zuulm.freischaltungVTS
Peer reviewjauulm.peerReview
DCMI TypeTextuulm.typeDCMI
VTS-ID7442uulm.vtsID
CategoryPublikationenuulm.category
Conference name2010 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010)uulm.conferenceName
Conference placeNew Orleans, LAuulm.conferencePlace
Conference start date2010-01-11uulm.conferenceStartDate
Conference end date2010-01-13uulm.conferenceEndDate
University Bibliographyjauulm.unibibliographie


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