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AuthorThapa, Sarad Bahadurdc.contributor.author
Date of accession2016-03-15T06:22:54Zdc.date.accessioned
Available in OPARU since2016-03-15T06:22:54Zdc.date.available
Year of creation2010dc.date.created
AbstractIn recent years, AlN has attracted considerable attention as a potential candidate for short wavelength optoelectronic and high temperature/high voltage electronic devices because of its widest bandgap (almost equal 6.01eV) among the group-III nitrides and extremely outstanding chemical and thermal stability under hostile environment. However, the epitaxial growth of AlN having excellent crystalline quality, smooth surface morphology, and good spectroscopic properties - as required for device fabrication - is still a big challenge. One major problem during the epitaxial growth of AlN and high Al content AlGaN is the parasitic gas-phase pre-reactions between ammonia and the metalorganic Al precursors. Another problem is the emergence of high density of threading dislocations due to a large lattice mismatch between the foreign substrate (sapphire) and the subsequently grown AlN epilayer. In this thesis, an epitaxial growth methodology is developed to obtain a very high quality AlN epilayer on c-plane sapphire substrate using MOVPE. The structural and spectroscopic properties of AlN epilayers have been investigated using X-ray, AFM, TEM, and cathodoluminescence measurements. In group-III nitrides, Si is used as an n-type dopant. In this work, we have investigated the effects of Si doping on the structural, spectroscopic and electrical properties of AlN and studied the doping limitations. Finally, high Al content AlGaN epilayers and AlN/AlxGa1-xN heterostructures have been grown and investigated for potential AlN based electronic and optoelectronic devices.dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
LicenseStandard (Fassung vom 01.10.2008)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
KeywordAlNdc.subject
KeywordMOVPEdc.subject
KeywordWide band gapdc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHAluminum nitridedc.subject.lcsh
LCSHHeterostructuresdc.subject.lcsh
LCSHMetal organic chemical vapor depositiondc.subject.lcsh
TitleStudies of AlN grown by MOVPE for electronic and optoelectronic applicationsdc.title
Resource typeDissertationdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-1730dc.identifier.doi
PPN632943440dc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-73576dc.identifier.urn
GNDAluminiumnitriddc.subject.gnd
GNDMOCVD-Verfahrendc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Date of activation2010-08-02T08:00:09Zuulm.freischaltungVTS
Peer reviewneinuulm.peerReview
Shelfmark print versionZ: J-H 13.756; W: W-H 12.228uulm.shelfmark
DCMI TypeTextuulm.typeDCMI
VTS ID7357uulm.vtsID
CategoryPublikationenuulm.category
Bibliographyuulmuulm.bibliographie


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