High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes

Erstveröffentlichung

2016

Authors

Quan, Zhiheng

Dinh, Duc V.

Presa, Silvino

Roycroft, Brendan

Foley, Ann

et al.

Wissenschaftlicher Artikel

Published in

IEEE Photonics Journal ; 8 (2016), 5. - Art.-Nr. 1601808. - ISSN 1943-0655. - eISSN 1943-0647

Link to publication

https://dx.doi.org/10.1109/JPHOT.2016.2596245

Faculties

Fakultät für Ingenieurwissenschaften, Informatik und Psychologie

Institutions

Institut für Optoelektronik

EU Project uulm

ALIGHT / AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications / EC / FP7 / 280587

Subject headings

[Free subject headings]: Light-emitting diodes (LEDs) | optoelectronic materials | semipolar gallium nitride (GaN) | laser lift-off (LLO) | metal organic vapor phase epitaxy (MOVPE) | quantum-well | wireless communication | plane sapphire | gan | growth | movpe
[DDC subject group]: DDC 620 / Engineering & allied operations

Metadata

Show full item record