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AuthorLi, Yueliangdc.contributor.author
AuthorQi, Haoyuandc.contributor.author
AuthorMeisch, Tobiasdc.contributor.author
AuthorHocker, Matthiasdc.contributor.author
AuthorThonke, Klausdc.contributor.author
AuthorScholz, Ferdinanddc.contributor.author
AuthorKaiser, Utedc.contributor.author
Date of accession2019-03-26T08:42:49Zdc.date.accessioned
Available in OPARU since2019-03-26T08:42:49Zdc.date.available
Date of first publication2017dc.date.issued
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
Keywordgallium nitridedc.subject
Keywordmovpedc.subject
Dewey Decimal GroupDDC 530 / Physicsdc.subject.ddc
TitleFormation of I-2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a (10<(1)overbar>1) semipolar GaN templatedc.title
Resource typeWissenschaftlicher Artikeldc.type
FacultyFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.affiliationGeneral
FacultyFakultät für Naturwissenschaftenuulm.affiliationGeneral
InstitutionZE Elektronenmikroskopieuulm.affiliationSpecific
InstitutionInstitut für Optoelektronikuulm.affiliationSpecific
InstitutionInstitut für Quantenmaterieuulm.affiliationSpecific
DCMI TypeTextuulm.typeDCMI
CategoryPublikationsnachweiseuulm.category
DOI (external)10.1063/1.4974050dc.identifier.doiExternal
Source - Title of sourceApplied Physics Letterssource.title
Source - Place of publicationAIP Publishingsource.publisher
Source - Volume110source.volume
Source - Issue2source.issue
Source - Year2017source.year
Source - Article number022105source.articleNumber
Source - ISSN0003-6951source.identifier.issn
Source - eISSN1077-3118source.identifier.eissn
FundingDFG [KA1295-19]uulm.funding
Suitable communityZentrale Einrichtungenuulm.community
Suitable communityFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.community
Suitable communityFakultät für Naturwissenschaftenuulm.community
WoS000392835300035uulm.identifier.wos


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