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AuthorDeyneka, Nataliyadc.contributor.author
Date of accession2016-03-14T11:54:21Zdc.date.accessioned
Available in OPARU since2016-03-14T11:54:21Zdc.date.available
Year of creation2003dc.date.created
AbstractCubic boron nitride (c-BN) is a material which exhibits similar properties as diamond. Obviously, it makes c-BN attractive for a broad field of applications like tribological and anti-corrosion coatings or as a starting material for high-temperature and high-power electronic devices. Boron nitride films were prepared by ion beam assisted deposition (IBAD) technique on top of Si(001) substrates. In order to overcome the stress/adhesion-related limitation of c-BN film thicknesses, an approach was taken based on sequential ion-induced stress relaxation and growth of thin layers stacked on top of each other to form a thick film. An appropriate in situ sputter cleaning procedure of a c-BN surface was developed resulting in an immediate c-BN growth on top of such a cleaned substrate without any intermediate layers. According to High Resolution Transmission Electron microscopy measurements, c-BN films are also found to be nanocrystalline (typical crystal size 5nm). A promising alternative way to enhance the crystalline quality and adhesion of c-BN films is significant increase of the deposition temperature up to the order of 1000 °C. It has been found that such 1000 °C-type temperatures do not cause Si diffusion from the substrate into the BN film. Cubic BN and hexagonal (h-) BN were also studied with respect to the depth profiles of incorporated Ar using Rutherford backscattering. Diffusion related changes of the Ar depth profiles for both c-BN and h-BN were only observed for temperatures well above 730 °C. In that case, the Ar mobility is attributed to grain boundary diffusion, which appears to be one order of magnitude higher in h-BN than in c-BN film. Grain boundary diffusion coefficients of Ar in h-BN and in c-BN have been estimated. On the other hand, bulk diffusion seems to be negligible at least in c-BN even at 1100 °C.dc.description.abstract
Languagededc.language.iso
PublisherUniversität Ulmdc.publisher
LicenseStandard (Fassung vom 03.05.2003)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v1dc.rights.uri
KeywordAESdc.subject
KeywordCubic boron nitridedc.subject
KeywordEELSdc.subject
KeywordGrain boundary diffusiondc.subject
KeywordHexagonal boron nitridedc.subject
KeywordHigh resolution transmission electron microscopydc.subject
KeywordHigh temperature depositiondc.subject
KeywordIon-beam-assisted depositiondc.subject
KeywordNanocrystalline structuredc.subject
KeywordNewton interferometrydc.subject
KeywordRutherford backscatteringdc.subject
KeywordSi substratedc.subject
LCSHDiffusiondc.subject.lcsh
LCSHFTIR spectroscopydc.subject.lcsh
LCSHNanostructured materialsdc.subject.lcsh
LCSHRaman spectroscopydc.subject.lcsh
LCSHThin filmsdc.subject.lcsh
TitleProperties of nanocrystalline cubic boron nitride filmsdc.title
Resource typeDissertationdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-86dc.identifier.doi
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-30830dc.identifier.urn
GNDArgondc.subject.gnd
GNDKraftmikroskopiedc.subject.gnd
FacultyFakultät für Naturwissenschaftenuulm.affiliationGeneral
Date of activation2003-07-29T17:49:06Zuulm.freischaltungVTS
Peer reviewneinuulm.peerReview
Shelfmark print versionZ: J-H 10.177 ; W: W-H 7.399uulm.shelfmark
DCMI TypeTextuulm.typeDCMI
VTS ID3083uulm.vtsID
CategoryPublikationenuulm.category
Bibliographyuulmuulm.bibliographie


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