Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN

Erstveröffentlichung

2017

Authors

Lamprecht, Matthias

Jmerik, Valentin N.

Collazo, Ramon

Sitar, Zlatko

Ivanov, Sergey V.

et al.

Beitrag zu einer Konferenz

Published in

physica status solidi (b) ; 254 (2017), 8. - Art.-Nr. 1600714. - ISSN 0370-1972. - eISSN 1521-3951

Link to publication

https://dx.doi.org/10.1002/pssb.201600714

Faculties

Fakultät für Naturwissenschaften

Institutions

Institut für Quantenmaterie

Conference

9th International Workshop on Nitride Semiconductors (IWN), 2016-10-02 - 2016-10-07, Orlando, FL

Subject headings

[Free subject headings]: AlN | deep levels | defects | photoluminescence | time-resolved photoluminescence | physical vapor transport | molecular-beam epitaxy | single-crystals | seeded growth | bulk | semiconductors | luminescence | transitions | absorption
[DDC subject group]: DDC 530 / Physics

Metadata

Show full item record