A unified approach to charge-conservative capacitance modelling in HEMTs
Brazil, Thomas J.
FacultiesFakultät für Ingenieurwissenschaften und Informatik
LicenseStandard (Fassung vom 01.10.2008)
The voltage dependence of high electron mobility transistor (HEMT) gate-source- and gate-drain-capacitance is described by a set of equations based on a unified charge-conservative model approach. The model is applied to a low-noise GaAs pseudomorphic-HEMT (pHEMT) technology as well as its power variant. In terms of topology and parameters, the new expressions resemble the Curtice drain current model. They provide a globally accurate description of nonlinearities in HEMT capacitance.
Original publicationIEEE microwave and wireless components letters 16 (2006), S. 678 - 680
Subject HeadingsHEMT [GND]
Modulation-doped field-effect transistors [LCSH]