Monolithic integration of a folded dipole antenna with a 24-GHz receiver in SiGe HBT technology
FacultiesFakultät für Ingenieurwissenschaften und Informatik
LicenseStandard (Fassung vom 01.10.2008)
The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-µm SiGe HBT process is presented. A high-resistivity silicon substrate (1000 cm) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and isolation techniques are described. The receiver, including the receive and an optional transmit antenna requires a chip area of 4.5 mm² and provides 30-dB conversion gain at 24 GHz with a power consumption of 960 mW.
Original publicationIEEE transactions on microwave theory and techniques 55 (2007), S. 1467 - 1475
Subject HeadingsHeterobipolartransistor [GND]
Antennas, dipole [LCSH]