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AuthorDederer, Jochendc.contributor.author
AuthorTrasser, Andreasdc.contributor.author
AuthorSchumacher, Hermanndc.contributor.author
Date of accession2016-03-14T15:19:48Zdc.date.accessioned
Available in OPARU since2016-03-14T15:19:48Zdc.date.available
Year of creation2006dc.date.created
AbstractTwo compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4 dB at 7 GHz and below 2.9 dB in the UWB bandwidth from 3.1 GHz up to 10.6 GHz. The circuit delivers 17.3 dB peak gain with gain variations of less than 1.6 dB within the entire band. The measured input 1-dB compression point at 7 GHz is - 13.5 dBm with 16.6 mA total current consumption from a 3.3 V supply. The second approach exhibits noise figures between 2.8 dB and 3.2 dB within the UWB band. Measurements show 23.5 dB of gain with 0.6 dB variation over the full bandwidth. The measured input 1-dB compression point at 7 GHz is - 19.5 dBm with a 18.2 mA bias current at a 3.0 V supply. The first and second design occupy a chip size of 0.39 mm x 0.38 mm and 0.44 mm x 0.38 mm, respectively.dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
ID of original publ.http://dx.doi.org/10.1109/SMIC.2005.1588005dc.relation.uri
LicenseStandard (Fassung vom 01.10.2008)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
KeywordSiGe HBTdc.subject
KeywordUWBdc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHLow noise amplifiersdc.subject.lcsh
LCSHUltra-wideband devicesdc.subject.lcsh
TitleCompact SiGe HBT low noise amplifiers for 3.1 - 10.6 GHz ultra-wideband applicationsdc.title
Resource typeBeitrag zu einer Konferenzdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-1036dc.identifier.doi
PPN164771995Xdc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-67477dc.identifier.urn
GNDUltraweitbanddc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Citation of original publ.Proceedings Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2006, San Diego, USA, January 18 - 20, 2006, pp. 391 - 394uulm.citationOrigPub
Date of activation2009-03-20T17:43:58Zuulm.freischaltungVTS
Peer reviewjauulm.peerReview
DCMI TypeTextuulm.typeDCMI
VTS ID6747uulm.vtsID
CategoryPublikationenuulm.category
Conference nameTopical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2006uulm.conferenceName
Conference placeSan Diego, CAuulm.conferencePlace
Conference start date2006-01-18uulm.conferenceStartDate
Conference end date2006-01-20uulm.conferenceEndDate
Bibliographyuulmuulm.bibliographie


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