Compact SiGe HBT low noise amplifiers for 3.1 - 10.6 GHz ultra-wideband applications
FacultiesFakultät für Ingenieurwissenschaften und Informatik
LicenseStandard (Fassung vom 01.10.2008)
Two compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4 dB at 7 GHz and below 2.9 dB in the UWB bandwidth from 3.1 GHz up to 10.6 GHz. The circuit delivers 17.3 dB peak gain with gain variations of less than 1.6 dB within the entire band. The measured input 1-dB compression point at 7 GHz is - 13.5 dBm with 16.6 mA total current consumption from a 3.3 V supply. The second approach exhibits noise figures between 2.8 dB and 3.2 dB within the UWB band. Measurements show 23.5 dB of gain with 0.6 dB variation over the full bandwidth. The measured input 1-dB compression point at 7 GHz is - 19.5 dBm with a 18.2 mA bias current at a 3.0 V supply. The first and second design occupy a chip size of 0.39 mm x 0.38 mm and 0.44 mm x 0.38 mm, respectively.
Original publicationProceedings Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2006, San Diego, USA, January 18 - 20, 2006, pp. 391 - 394
Subject HeadingsUltraweitband [GND]
Low noise amplifiers [LCSH]
Ultra-wideband devices [LCSH]