InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
FacultiesFakultät für Ingenieurwissenschaften und Informatik
LicenseStandard (Fassung vom 01.10.2008)
In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of the InP-based PIN diode and HFET on one InP-substrate. Using these two devices, we integrated three different MMIC designs on one wafer: SPDT switch, phaseshifter and a combination of SPDT switch and LNA for a multifunctional MMIC.
Original publicationProceedings 12th Indium Phosphide and Related Materials Conference (IPRM) 2000, pp. 341 - 344
Subject HeadingsMMIC [GND]
Millimeter waves [LCSH]