InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
Soole, Julian B. D.
FacultiesFakultät für Ingenieurwissenschaften und Informatik
LicenseStandard (Fassung vom 01.10.2008)
Interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InCaAs-InP material system have been the subject of keen research over the past couple of years for use in long wavelength communication systems. This paper reviews the properties of these detectors and discusses the current state-of-the-art performance achieved by experimental devices. The experimental work concentrates on the barrier-enhanced lattice-matched InAIAs-InCaAs device grown by low pressure OMCVD, which has to date yielded detectors with the highest performance characteristics. Current research on their integration with FET’s to form monolithic receivers and with waveguides for on-chip optical signal processing is also included.
Original publicationIEEE journal of quantum electronics 27 (1991), S. 737 - 752
Subject HeadingsMetall-Halbleiter-Kontakt [GND]
Optical communications [LCSH]
Optical detectors [LCSH]