Show simple item record

AuthorSchumacher, Hermanndc.contributor.author
AuthorHayes, J. R.dc.contributor.author
AuthorBhat, Rajaramdc.contributor.author
AuthorKoza, M.dc.contributor.author
Date of accession2016-03-14T15:19:47Zdc.date.accessioned
Available in OPARU since2016-03-14T15:19:47Zdc.date.available
Year of creation1987dc.date.created
AbstractN/Adc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
ID of original publ.http://dx.doi.org/10.1109/IEDM.1987.191568dc.relation.uri
LicenseStandard (Fassung vom 01.10.2008)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHBipolar transistorsdc.subject.lcsh
TitleOMCVD grown InP/InGaAs heterojunction bipolar transistorsdc.title
Resource typeBeitrag zu einer Konferenzdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-1032dc.identifier.doi
PPN1647718791dc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-67437dc.identifier.urn
GNDMOCVD-Verfahrendc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Citation of original publ.Proceedings International Electron Devices Meeting 1987, pp. 852 - 853uulm.citationOrigPub
Date of activation2009-03-17T16:07:34Zuulm.freischaltungVTS
Peer reviewjauulm.peerReview
DCMI TypeTextuulm.typeDCMI
VTS-ID6743uulm.vtsID
CategoryPublikationenuulm.category
Conference nameInternational Electron Devices Meeting 1987uulm.conferenceName
Conference placeWashington D.C.uulm.conferencePlace
Conference start date1987-12-06uulm.conferenceStartDate
Conference end date1987-12-09uulm.conferenceEndDate


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record