High power nanocrystalline diamond RF MEMS - a combined look at mechanical and microwave properties
FacultiesFakultät für Ingenieurwissenschaften und Informatik
LicenseStandard (Fassung vom 01.10.2008)
In this paper, thermally actuated nanocrystalline diamond bridges are presented. Intrinsic and boron doped NCD films have been grown on low resistive silicon wafer. Young’s modulus of 1020 GPa was measured using a non-destructive technique. The films were intentionally grown with built in compressive stress and the measured values were in the range of 140 - 560 MPa. Design, fabrication and integration of the compressively stressed bi-stable actuators are presented in detail. The actuators were used to realize switches in CPW and microstrip topologies. Measured s-parameters show a return loss of 20 dB and insertion loss of 0.2 dB at 20 GHz. High power measurements were performed in the range of 24 - 47 dBm at 2.1 GHz with an insertion loss of 0.2 - 0.3 dB in the entire range.
Original publicationProc IEEE Internat Conf on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2008), Tel Aviv, Israel, May 13 - 14, 2008, pp 1 - 8
Subject HeadingsNanokristall [GND]
Radio frequency microelectromechanical systems [LCSH]