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AuthorRinaldi, Fernandodc.contributor.author
Date of accession2016-03-14T15:19:45Zdc.date.accessioned
Available in OPARU since2016-03-14T15:19:45Zdc.date.available
Year of creation2008dc.date.created
AbstractThis work concerns molecular beam epitaxy (MBE) growth and characterization of multilayer structures for vertically emitting laser devices. In particular, this thesis is focused on the fabrication of novel VCSEL (vertical-cavity surface-emitting laser) and VECSEL (vertical-external-cavity surface-emitting laser) multilayer structures grown on GaAs substrate. Several VCSEL structures for emitting wavelengths of 760, 850, and 980 nm were realized and the corresponding devices show high performance and have direct technological applications. As example, single-mode 760 nm VCSELs are successfully employed in oxygen sensing, or integrated VCSELs-photodetector systems allow bidirectional data transmission in full-duplex mode at 2.5 Gbit/s over 50 m graded-index multimode fiber. As far as regard VECSELs, samples for devices having emitting wavelengths of 850 nm and 980 nm were produced. High-performance 850 nm quantum-well-pumped VECSELs having a slope efficiency of 67 % were demonstrated. The calibration techniques of the MBE system are described and applied to the practical cases of the growth of complex laser structures. Therefore, an important part of this work is devoted to HRXRD (high-resolution x-ray diffraction) analysis of the grown samples. This is a powerful tool to characterize not only the strain configuration and the compositional profile of the layers, but also to indirectly monitor the molecular fluxes improving the reliability of the MBE system.dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
LicenseStandard (Fassung vom 01.10.2008)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
KeywordHRXRDdc.subject
KeywordMBEdc.subject
KeywordVCSELsdc.subject
KeywordVECSELsdc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHEpitaxydc.subject.lcsh
LCSHSemiconductor lasersdc.subject.lcsh
LCSHX-rays. Characterizationdc.subject.lcsh
TitleMBE growth and characterization of multilayer structures for vertically emitting laser devicesdc.title
Resource typeDissertationdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-1025dc.identifier.doi
PPN590376357dc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-66673dc.identifier.urn
GNDMolekularstrahlepitaxiedc.subject.gnd
GNDRHEEDdc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Date of activation2009-01-19T08:56:45Zuulm.freischaltungVTS
Peer reviewneinuulm.peerReview
Shelfmark print versionZ: J-H 9.790; W: W-H 9.665uulm.shelfmark
DCMI TypeTextuulm.typeDCMI
VTS-ID6667uulm.vtsID
CategoryPublikationenuulm.category
University Bibliographyjauulm.unibibliographie


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