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ContributorHosch, Michaeldc.contributor
ContributorBehtash, Rezadc.contributor
ContributorThorpe, James R.dc.contributor
ContributorHeld, Stefaniedc.contributor
ContributorBlanck, Hervédc.contributor
ContributorRiepe, Klaus J.dc.contributor
ContributorSchumacher, Hermanndc.contributor
Date of accession2016-03-14T15:19:41Zdc.date.accessioned
Available in OPARU since2016-03-14T15:19:41Zdc.date.available
Year of creation2008dc.date.created
AbstractAn analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, small signal RF measurements and RF power measurements. In addition to the characterization results, we present a simulation study on how to improve the performance based on pure device layout variations and we will show which parameters are dominating. Furthermore, we will analyse the electric field distribution in the device and show that a slanted gate profile is beneficial, while the electric field in the gate-drain region can be optimized by the incorporation of a source-terminated field plate (STFP).dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
ID of original publ.http://dx.doi.org/10.1109/APMC.2008.4958635dc.relation.uri
LicenseStandard (Fassung vom 01.10.2008)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
KeywordGaN HEMTdc.subject
KeywordLayout aspectsdc.subject
KeywordTechnology aspectsdc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHModulation-doped field-effect transistorsdc.subject.lcsh
TitleThe impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETsdc.title
Resource typeKonferenzveröffentlichungdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-1020dc.identifier.doi
PPN164765565Xdc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-66537dc.identifier.urn
GNDHEMTdc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Citation of original publ.Proc. 20th Asia Pacific Microwave Conference (APMC 2008), Hong Kong, P.R. China, December 16 - 19, 2008uulm.citationOrigPub
Date of activation2009-01-09T23:10:05Zuulm.freischaltungVTS
Peer reviewjauulm.peerReview
DCMI TypeTextuulm.typeDCMI
VTS-ID6653uulm.vtsID
CategoryPublikationenuulm.category


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