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The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs

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Veröffentlichung
2009-01-09
DOI
10.18725/OPARU-1020

Konferenzveröffentlichung

Contributors
Hosch, Michael
Behtash, Reza
Thorpe, James R.
Held, Stefanie
Blanck, Hervé
Riepe, Klaus J.
Schumacher, Hermann
Faculties
Fakultät für Ingenieurwissenschaften und Informatik
Peer review
ja
License
Standard (Fassung vom 01.10.2008)
https://oparu.uni-ulm.de/xmlui/license_v2
Abstract
An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, small signal RF measurements and RF power measurements. In addition to the characterization results, we present a simulation study on how to improve the performance based on pure device layout variations and we will show which parameters are dominating. Furthermore, we will analyse the electric field distribution in the device and show that a slanted gate profile is beneficial, while the electric field in the gate-drain region can be optimized by the incorporation of a source-terminated field plate (STFP).
Date created
2008
Original publication
Proc. 20th Asia Pacific Microwave Conference (APMC 2008), Hong Kong, P.R. China, December 16 - 19, 2008
http://dx.doi.org/10.1109/APMC.2008.4958635
Subject Headings
HEMT [GND]
Modulation-doped field-effect transistors [LCSH]
Keywords
GaN HEMT; Layout aspects; Technology aspects
Dewey Decimal Group
DDC 620 / Engineering & allied operations

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Hosch, Michael et al. (2009): The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs. Open Access Repositorium der Universität Ulm. http://dx.doi.org/10.18725/OPARU-1020

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