The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs
Thorpe, James R.
Riepe, Klaus J.
Beitrag zu einer Konferenz
FacultiesFakultät für Ingenieurwissenschaften und Informatik
20th Asia Pacific Microwave Conference (APMC 2008), 2008-12-16 - 2008-12-19, Hong Kong
An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, small signal RF measurements and RF power measurements. In addition to the characterization results, we present a simulation study on how to improve the performance based on pure device layout variations and we will show which parameters are dominating. Furthermore, we will analyse the electric field distribution in the device and show that a slanted gate profile is beneficial, while the electric field in the gate-drain region can be optimized by the incorporation of a source-terminated field plate (STFP).
Original publicationProc. 20th Asia Pacific Microwave Conference (APMC 2008), Hong Kong, P.R. China, December 16 - 19, 2008
Subject headings[GND]: HEMT
[LCSH]: Modulation-doped field-effect transistors
[Free subject headings]: GaN HEMT | Layout aspects | Technology aspects
[DDC subject group]: DDC 620 / Engineering & allied operations
LicenseStandard (Fassung vom 01.10.2008)
MetadataShow full item record
DOI & citation
Please use this identifier to cite or link to this item: http://dx.doi.org/10.18725/OPARU-1020