• English
    • Deutsch
  • English 
    • English
    • Deutsch
  • Login
View Item 
  •   Home
  • Universität Ulm
  • Publikationen
  • View Item
  •   Home
  • Universität Ulm
  • Publikationen
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs

Thumbnail
vts_6653_9122.pdf (638.2Kb)
5 Seiten

peer-reviewed

Veröffentlichung
2009-01-09
Contributors
Hosch, Michael
Behtash, Reza
Thorpe, James R.
Held, Stefanie
Blanck, Hervé
Riepe, Klaus J.
Schumacher, Hermann
Beitrag zu einer Konferenz


Faculties
Fakultät für Ingenieurwissenschaften und Informatik
Conference
20th Asia Pacific Microwave Conference (APMC 2008), 2008-12-16 - 2008-12-19, Hong Kong
Abstract
An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, small signal RF measurements and RF power measurements. In addition to the characterization results, we present a simulation study on how to improve the performance based on pure device layout variations and we will show which parameters are dominating. Furthermore, we will analyse the electric field distribution in the device and show that a slanted gate profile is beneficial, while the electric field in the gate-drain region can be optimized by the incorporation of a source-terminated field plate (STFP).
Date created
2008
Original publication
Proc. 20th Asia Pacific Microwave Conference (APMC 2008), Hong Kong, P.R. China, December 16 - 19, 2008
http://dx.doi.org/10.1109/APMC.2008.4958635
Subject headings
[GND]: HEMT
[LCSH]: Modulation-doped field-effect transistors
[Free subject headings]: GaN HEMT | Layout aspects | Technology aspects
[DDC subject group]: DDC 620 / Engineering & allied operations
License
Standard (Fassung vom 01.10.2008)
https://oparu.uni-ulm.de/xmlui/license_v2

Metadata
Show full item record

DOI & citation

Please use this identifier to cite or link to this item: http://dx.doi.org/10.18725/OPARU-1020

Hosch, Michael et al. (2009): The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs. Open Access Repositorium der Universität Ulm und Technischen Hochschule Ulm. http://dx.doi.org/10.18725/OPARU-1020
Citation formatter >



Policy | kiz service OPARU | Contact Us
Impressum | Privacy statement
 

 

Advanced Search

Browse

All of OPARUCommunities & CollectionsPersonsInstitutionsPublication typesUlm SerialsDewey Decimal ClassesEU projects UlmDFG projects UlmOther projects Ulm

My Account

LoginRegister

Statistics

View Usage Statistics

Policy | kiz service OPARU | Contact Us
Impressum | Privacy statement