The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs
Beteiligte PersonenHosch, Michael
Thorpe, James R.
Riepe, Klaus J.
FakultätenFakultät für Ingenieurwissenschaften und Informatik
LizenzStandard (Fassung vom 01.10.2008)
An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, small signal RF measurements and RF power measurements. In addition to the characterization results, we present a simulation study on how to improve the performance based on pure device layout variations and we will show which parameters are dominating. Furthermore, we will analyse the electric field distribution in the device and show that a slanted gate profile is beneficial, while the electric field in the gate-drain region can be optimized by the incorporation of a source-terminated field plate (STFP).
Erstellung / Fertigstellung
OriginalpublikationProc. 20th Asia Pacific Microwave Conference (APMC 2008), Hong Kong, P.R. China, December 16 - 19, 2008
Normierte SchlagwörterHEMT [GND]
Modulation-doped field-effect transistors [LCSH]