Polarisationseffekte in Gruppe-(III)-Nitriden und deren Anwendung in p-Kanal FETs und elektromechanischen Strukturen
FacultiesFakultät für Ingenieurwissenschaften und Informatik
LicenseStandard (Fassung vom 03.05.2003)
Polarization effects in group-(III)-nitrides were used in novel p-channel GaN/InGaN/GaN HFET structures as well as electromechanical GaN and AlGaN/GaN sensor structures. Low resistive Au/Ni/Au and NiPd/Au ohmic contacts to p-channel GaN-based material were developed and 2DHG-channels were measured in polarization doped heterostructures. Freestanding GaN-membranes were fabricated by using a (111)-Si-substrate. Interesting polarization effects in GaN MEMS induced by mechanical stress were investigated.
Subject HeadingsFeldeffekttransistor [GND]
Modulation-doped field-effect transistors [LCSH]