Highly compact 3.1 - 10.6 GHz UWB LNA in SiGe HBT technology
Konferenzveröffentlichung
Autoren
Dederer, Jochen
Chartier, Sébastien
Feger, Till
Spitzberg, Ursula
Trasser, Andreas
Fakultäten
Fakultät für Ingenieurwissenschaften und InformatikPeer-Review
ja
Zusammenfassung
We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mym SiGe hetero-junction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise and power matching have been achieved with a cascode topology using resistive shunt feedback in combi-nation with a diode DC level shifter. The measured input IP3 is - 14.1 dBm with 10.3mA total current from a 3.5 V supply. All performance characteristics are comparable to the best reported UWB LNAs, but come at a drastically smaller occupied die area of 0.13 mm2.
Erstellung / Fertigstellung
2007
Originalpublikation
Proceedings 2nd European Microwave Integrated Circuits Conference (EuMIC 2007), Munich, Germany, Oct. 8 - 10, 2007, S. 247 - 250http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4412695
Normierte Schlagwörter
Heterobipolartransistor [GND]Ultraweitband [GND]
Low noise amplifiers [LCSH]
Schlagwörter
SiGe HBT technology; UWBDDC-Sachgruppe
DDC 620 / Engineering & allied operationsMetadata
Zur LanganzeigeZitiervorlage
Dederer, Jochen et al. (2008): Highly compact 3.1 - 10.6 GHz UWB LNA in SiGe HBT technology. Open Access Repositorium der Universität Ulm. http://dx.doi.org/10.18725/OPARU-996