A compact low-power SiGe:C BiCMOS amplifier for 77-81 GHz automotive radar
FakultätenFakultät für Ingenieurwissenschaften und Informatik
LizenzStandard (Fassung vom 03.05.2003)
In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79 GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique and an efficient DC filtering network were used. The amplifier shows a maximum measured gain of 13.2 dB at exactly 79 GHz and an excellent reverse isolation of more than 40 dB over the whole measured frequency range. Its performance was measured at different temperatures, showing a decrease of 5.3 dB in gain between room temperature and 85° C. The measured -1 dB input compression point is at -15 dBm. The power consumption is 52 mW at a supply voltage of 2.7 V. The circuit has a compact layout and consumes an area of 525 x 500 µm2 including bonding pads.
Erstellung / Fertigstellung
OriginalpublikationProc 2008 IEEE Topical Meeting on Silicon Monolithic ICs in RF Systems (SiRF), Orlando, FL, USA, January 23-25, 2008, pp 195-198
Normierte SchlagwörterBICMOS [GND]
Operational amplifiers [LCSH]