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Passivation of H-terminated diamond with MOCVD-aluminium nitride - a key to understand and stabilize its surface conductivity 
Kueck, Daniel et al. (2010)
Beitrag zu einer Konferenz

Electrochemical Response of Biomolecules on Carbon Substrates: Comparison between Oxidized HOPG and O-Terminated Boron-Doped CVD Diamond 
Baier, Claudia et al. (2010)
Beitrag zu einer Konferenz

Microwave analysis of PACVD diamond deposition reactor based on electromagnetic modelling 
Silva, Francois et al. (2010)
Beitrag zu einer Konferenz

Analysis of passivated diamond surface channel FET in dual-gate configuration - Localizing the surface acceptor 
Kueck, Daniel et al. (2010)
Beitrag zu einer Konferenz

Electronic surface barrier properties of boron-doped diamond oxidized by plasma treatment 
Pietzka, Carsten et al. (2010)
Beitrag zu einer Konferenz

Surface structure and surface barrier characteristics of boron-doped diamond in electrolytes after CF4 plasma treatment in RF-barrel reactor 
Denisenko, Andrej V. et al. (2010)
Beitrag zu einer Konferenz

AlN as passivation for surface channel FETs on H-terminated diamond 
Kueck, D. et al. (2010)
Beitrag zu einer Konferenz

Transparent diamond microelectrodes for biochemical application 
Gao, Ziyao et al. (2010)
Beitrag zu einer Konferenz

Thermal oxidation of lattice matched InAlN/GaN heterostructures 
Alomari, Mohammed et al. (2010)
Beitrag zu einer Konferenz

64 to 86 GHz VCO Utilizing Push-Push Frequency Doubling in a 80 GHz f(T) SiGe HBT Technology 
Liu, Gang et al. (2010)
Beitrag zu einer Konferenz

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Institut für Elektronische Bauelemente und Schaltungen (15)
Institut für Optoelektronik (2)Electron Microscopy Group of Materials Science (EMGMS) (1)... View MorePersonKohn, Erhard (6)Schumacher, Hermann (5)Liu, Gang (4)... View MoreResource type
Beitrag zu einer Konferenz (15)
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2010 (15)
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