Browsing Fakultät für Ingenieurwissenschaften, Informatik und Psychologie by Funding "MORGAN / Materials for Robust Gallium Nitride / EC / FP7 / 214610"
Now showing items 1-5 of 5
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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation
(2013)Wissenschaftlicher Artikel
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Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 degrees C) Electronics
(2013)Wissenschaftlicher Artikel
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Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors
(2013)Wissenschaftlicher Artikel