Now showing items 1-4 of 4

    • 24 and 36 GHz SiGe HBT power amplifiers 

      Beitrag zu einer Konferenz
      Chartier, Sébastien; Sönmez, Ertugrul; Schumacher, Hermann
      We present in this paper two amplifiers using the SiGe HBT technology, operating at 24 GHz and 36 GHz, respectively. The first amplifier was designed to operate in the 24 GHz ISM band, especially for traffic and automotive ...
    • Millimeter-wave amplifiers using a 0.8 µm Si/SiGe HBT technology 

      Beitrag zu einer Konferenz
      Chartier, Sébastien; Sönmez, Ertugrul; Schumacher, Hermann
      The authors present three amplifiers, operating at 36, 40 and 50 GHz implemented in a low-cost 0.8 um Si/SiGe HBT technology which features an fT and fMAX of 80 GHz. Each amplifier shows a high gain, a high isolation and ...
    • Millimeter-wave Si/SiGe HBT frequency divider using dynamic and static division stages 

      Beitrag zu einer Konferenz
      Chartier, Sébastien; Sönmez, Ertugrul; Dederer, Jochen; Schleicher, Bernd; Schumacher, Hermann
      In this paper, the authors present a fully integrated frequency divider with a divide ratio of 32, using a 0.8 um Si/SiGe HBT technology. The divider operates at least up to 40 GHz and shows outstanding performance such ...
    • Monolithic integration of a folded dipole antenna with a 24-GHz receiver in SiGe HBT technology 

      Wissenschaftlicher Artikel
      Öjefors, Erik; Sönmez, Ertugrul; Chartier, Sébastien; Lindberg, Peter; Schick, Christoph; Rydberg, Anders; Schumacher, Hermann
      The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-µm SiGe HBT process is presented. A high-resistivity silicon substrate (1000 cm) is used for the implemented circuit ...