Now showing items 1-3 of 3

    • High temperature stability of nitride-based power HEMTs 

      Beitrag zu einer Konferenz
      Maier, David; Alomari, Mohammed; Kohn, Erhard; Diforte-Poisson, Marie-Antoinette; Dua, Christian; Delage, Sylvain L.; Grandjean, Nicolas; Carlin, Jean-Francois; Chuvilin, Andrey; Kaiser, Ute; Troadec, David; Gaquière, Christophe
      The temperature stability of InAlN/GaN heterostructure FETs has been tested by a stepped temperature test routine under large signal operation conditions. Devices have been successfully operated up to 900 °C for 50 hrs. ...
    • Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE 

      Wissenschaftlicher Artikel
      Rettig, Oliver; Scholz, Jan-Patrick; Steiger, Natja; Bauer, Sebastian; Hubacek, Tomas; Zikova, Marketa; Li, Yueliang; Qi, Haoyuan; Biskupek, Johannes; Kaiser, Ute; Thonke, Klaus; Scholz, Ferdinand (Universität Ulm, 2018)

    • Testing the temperature limits of GaN-based HEMT devices 

      Wissenschaftlicher Artikel
      Maier, David; Alomari, Mohammed; Grandjean, Nicolas; Carlin, Jean-Francois; Diforte-Poisson, Marie-Antoinette; Dua, Christian; Chuvilin, Andrey; Troadec, David; Gaquière, Christophe; Kaiser, Ute; Delage, Sylvain L.; Kohn, Erhard
      The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility ...