Browsing Fakultät für Ingenieurwissenschaften, Informatik und Psychologie by Person "Kaiser, Ute"
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Beitrag zu einer KonferenzThe temperature stability of InAlN/GaN heterostructure FETs has been tested by a stepped temperature test routine under large signal operation conditions. Devices have been successfully operated up to 900 °C for 50 hrs. ...
Wissenschaftlicher Artikel(Universität Ulm, 2018)
Wissenschaftlicher ArtikelThe high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility ...