Now showing items 1-4 of 4

    • 79 GHz fully integrated fully differential Si/SiGe HBT amplifier for automotive radar applications 

      Chartier, Sébastien; Schleicher, Bernd; Feger, Till; Purtova, Tatyana; Schumacher, Hermann
      In this work, the authors present a fully integrated, fully differential amplifier operating at 79 GHz using a highspeed Si/SiGe hetero-bipolar technology. This amplifier needs a single supply voltage and shows high ...
    • A compact low-power SiGe:C BiCMOS amplifier for 77-81 GHz automotive radar 

      Schleicher, Bernd; Chartier, Sébastien; Fischer, Gerhard; Korndörfer, Falk; Borngräber, Johannes; Feger, Till; Schumacher, Hermann
      In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79 GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique and an efficient DC ...
    • A fully monolithic 3.1 - 10.6 GHz UWB Si/SiGe HBT impulse-UWB correlation receiver 

      Dederer, Jochen; Schleicher, Bernd; Trasser, Andreas; Feger, Till; Schumacher, Hermann
      A 3.1-to-10.6 GHz Impulse-UWB correlation receiver in a 0.8 um Si/SiGe HBT technology is presented. The fully monolithic receiver with 0.8 mm2 chip size comprises a low-noise amplifier with maximum noise figure of 3.2 dB, ...
    • Highly compact 3.1 - 10.6 GHz UWB LNA in SiGe HBT technology 

      Dederer, Jochen; Chartier, Sébastien; Feger, Till; Spitzberg, Ursula; Trasser, Andreas; Schumacher, Hermann
      We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mym SiGe hetero-junction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the ...