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79 GHz fully integrated fully differential Si/SiGe HBT amplifier for automotive radar applications
In this work, the authors present a fully integrated, fully differential amplifier operating at 79 GHz using a highspeed Si/SiGe hetero-bipolar technology. This amplifier needs a single supply voltage and shows high ...
Si/SiGe integrated circuits for impulse-radio UWB sensing and communications
Impulse-radio ultra-wideband (I-UWB) systems for sensing and communications offer very low power consumption, and allow precise radar and location sensing alongside with communications. Therefore, they are interesting ...
InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
Interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InCaAs-InP material system have been the subject of keen research over the past couple of years for use in long wavelength ...
Monolithic integration of a folded dipole antenna with a 24-GHz receiver in SiGe HBT technology
The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-µm SiGe HBT process is presented. A high-resistivity silicon substrate (1000 cm) is used for the implemented circuit ...
InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of ...
MEMS SiGe technologies for advanced wireless communications
This paper shows the potentialities of merging the MEMS and micromachining with SiGe technologies in order to speed up the performances of the next generation of front ends in terms of flexibility, reconfigurability and ...
Compact SiGe HBT low noise amplifiers for 3.1 - 10.6 GHz ultra-wideband applications
Two compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4 dB at 7 GHz and below 2.9 dB in the UWB bandwidth from 3.1 GHz up to ...
OMCVD grown InP/InGaAs heterojunction bipolar transistors
A fully monolithic 3.1 - 10.6 GHz UWB Si/SiGe HBT impulse-UWB correlation receiver
A 3.1-to-10.6 GHz Impulse-UWB correlation receiver in a 0.8 um Si/SiGe HBT technology is presented. The fully monolithic receiver with 0.8 mm2 chip size comprises a low-noise amplifier with maximum noise figure of 3.2 dB, ...
Highly compact impulse UWB transmitter for high-resolution movement detection
In this paper the hybrid integration of a FCC-compliant fifth-order Gaussian derivative impulse generator IC together with a compact ultra-wideband Vivaldi antenna is presented. The setup results in a compact FCC-compliant ...