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Bias-free 2.5Gb/s data transmission using GaAs VCSELs at 835nm emission wavelength
Schnitzer, P et al. (1997)
Beitrag zu einer Konferenz
Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates
Christiansen, S et al. (1997)
Beitrag zu einer Konferenz
Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescence
Salviati, G et al. (1997)
Beitrag zu einer Konferenz
High-performance oxide-confined GaAs VCSEL's
Weigl, B et al. (1997)
Beitrag zu einer Konferenz
On surface cracking of ammonia for MBE growth of GaN
Kamp, M et al. (1997)
Beitrag zu einer Konferenz
Sub-half-mA single-mode 1-D vertical-cavity laser arrays for 1Gbit/s data transmission
Jung, C et al. (1997)
Beitrag zu einer Konferenz
High-bit-rate data transmission with short-wavelength oxidized VCSEL's: Toward bias-free operation
Michalzik, R et al. (1997)
Beitrag zu einer Konferenz
Bias-free 1 Gb/s data transmission using high efficiency VCSELs
Schnitzer, P et al. (1997)
Beitrag zu einer Konferenz