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I-2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
Tischer, Ingo et al. (2011)
Wissenschaftlicher Artikel
Stacking fault-related luminescence features in semi-polar GaN
Tischer, Ingo et al. (2011)
Wissenschaftlicher Artikel
Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells
Joenen, Holger et al. (2011)
Wissenschaftlicher Artikel
Luminescence properties of epitaxially grown GaN and InGaN layers around ZnO nanopillars
Fikry, Mohamed et al. (2011)
Wissenschaftlicher Artikel
Transformations of Carbon Adsorbates on Graphene Substrates under Extreme Heat
Westenfelder, Benedikt et al. (2011)
Wissenschaftlicher Artikel
TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiNx interlayers
Klein, Olaf P. et al. (2011)
Wissenschaftlicher Artikel
Growth and coalescence behavior of semipolar (11(2)over-bar2) GaN on pre-structured r-plane sapphire substrates
Schwaiger, Stephan et al. (2011)
Wissenschaftlicher Artikel
Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces
Jönen, Holger et al. (2011)
Wissenschaftlicher Artikel
Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11(2)over-bar2) and (10(1)over-bar1) pyramid facets
Metzner, Sebastian et al. (2011)
Wissenschaftlicher Artikel