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Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers
Neuschl, Benjamin et al. (2010)
Wissenschaftlicher Artikel
Strain and defects in Si-doped (Al)GaN epitaxial layers
Forghani, Kamran et al. (2012)
Wissenschaftlicher Artikel
Measuring strain caused by ion implantation in GaN
Mendes, Pedro et al. (2019)
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Stacking fault emission in GaN: Influence of n-type doping
Hocker, Matthias et al. (2016)
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Toward defect-free semi-polar GaN templates on pre-structured sapphire
Han, Yisong et al. (2016)
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Efficiency studies on semipolar GaInN-GaN quantum well structures
Scholz, Ferdinand; Meisch, Tobias; Elkhouly, Karim (2016)
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High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes
Quan, Zhiheng et al. (2016)
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Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample
Hocker, Matthias et al. (2017)
Wissenschaftlicher Artikel
GaInN Quantum Wells as Optochemical Transducers for Chemical Sensors and Biosensors
Heinz, Dominik et al. (2017)
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Spectroscopic study of semipolar (11(2)over-bar2)-HVPE GaN exhibiting high oxygen incorporation
Schustek, Philipp et al. (2014)
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