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Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime 
Grabherr, M et al. (1997)
Wissenschaftlicher Artikel

Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N-2 overpressure 
Strite, S et al. (1997)
Wissenschaftlicher Artikel

Butt-coupling efficiency of VCSEL's into multimode fibers 
Heinrich, J; Zeeb, E; Ebeling, Karl Joachim (1997)
Wissenschaftlicher Artikel

Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N-2 overpressure 
Pelzmann, A et al. (1997)
Wissenschaftlicher Artikel

GaN based LED's with different recombination zones 
Schauler, M et al. (1997)
Wissenschaftlicher Artikel

4.8 mW singlemode oxide confined top-surface emitting vertical-cavity laser diodes 
Jung, C et al. (1997)
Wissenschaftlicher Artikel

57% wallplug efficiency oxide-confined 850nm wavelength GaAs VCSELs 
Jager, R et al. (1997)
Wissenschaftlicher Artikel

High temperature 1Gbit/s data transmission using lambda=835nm GaAs VCSELs 
Schnitzer, P et al. (1997)
Wissenschaftlicher Artikel

High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking 
Mayer, M et al. (1997)
Wissenschaftlicher Artikel

Bias-free 1-Gb/s data transmission using top vertical-cavity surface-emitting laser diodes 
Schnitzer, P et al. (1997)
Wissenschaftlicher Artikel

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PersonEbeling, Karl Joachim (12)Kamp, M (5)... View MorePublication type
Wissenschaftlicher Artikel (14)
Issue date
1997 (14)
University Bibliographyuulm (14)

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