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Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime
Grabherr, M et al. (1997)
Wissenschaftlicher Artikel
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N-2 overpressure
Strite, S et al. (1997)
Wissenschaftlicher Artikel
Butt-coupling efficiency of VCSEL's into multimode fibers
Heinrich, J; Zeeb, E; Ebeling, Karl Joachim (1997)
Wissenschaftlicher Artikel
Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N-2 overpressure
Pelzmann, A et al. (1997)
Wissenschaftlicher Artikel
GaN based LED's with different recombination zones
Schauler, M et al. (1997)
Wissenschaftlicher Artikel
4.8 mW singlemode oxide confined top-surface emitting vertical-cavity laser diodes
Jung, C et al. (1997)
Wissenschaftlicher Artikel
57% wallplug efficiency oxide-confined 850nm wavelength GaAs VCSELs
Jager, R et al. (1997)
Wissenschaftlicher Artikel
High temperature 1Gbit/s data transmission using lambda=835nm GaAs VCSELs
Schnitzer, P et al. (1997)
Wissenschaftlicher Artikel
High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking
Mayer, M et al. (1997)
Wissenschaftlicher Artikel
Bias-free 1-Gb/s data transmission using top vertical-cavity surface-emitting laser diodes
Schnitzer, P et al. (1997)
Wissenschaftlicher Artikel