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Now showing items 11-20 of 144
Emission characteristics of proton-implanted vertical cavity laser diodes
Moller, B et al. (1994)
Beitrag zu einer Konferenz
Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodes
Mayer, M et al. (1999)
Beitrag zu einer Konferenz
Bias-free 1 Gb/s data transmission using high efficiency VCSELs
Schnitzer, P et al. (1997)
Beitrag zu einer Konferenz
Influence of design variations on bipolar cascade VCSEL performance
Knodl, T et al. (2001)
Beitrag zu einer Konferenz
InGaAs VCSEL arrays for 1 gbit/s bias-free and 8 gbit/s biased data transmission
Schnitzer, P et al. (1998)
Beitrag zu einer Konferenz
OPTIMIZATION OF GAIN AND MODE FIELD OVERLAP FOR EFFICIENT PROTON IMPLANTED BROAD AREA VERTICAL-CAVITY LASER DIODES
Moller, B et al. (1994)
Beitrag zu einer Konferenz
64 channel flip-chip mounted selectively oxidized GaAsVCSEL array for parallel optical interconnects
Jung, C et al. (1999)
Beitrag zu einer Konferenz
High-performance oxide-confined GaAs VCSEL's
Weigl, B et al. (1997)
Beitrag zu einer Konferenz
Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy
Wang, CX et al. (2001)
Beitrag zu einer Konferenz
GaN based LEDs by MOVPE and MBE
Kamp, M et al. (1998)
Beitrag zu einer Konferenz