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Now showing items 181-187 of 187
Growth and coalescence studies of (11(2)over-bar2) oriented GaN on pre-structured sapphire substrates using marker layers
Caliebe, Marian et al. (2016)
Wissenschaftlicher Artikel
Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
Feneberg, Martin et al. (2010)
Wissenschaftlicher Artikel
Internal quantum efficiency and carrier injection efficiency of c-plane, 10(1)over-bar1 and 11(2)over-bar2 InGaN/GaN-based-light-emitting diodes
Wang, Junjun et al. (2016)
Wissenschaftlicher Artikel
Investigations on the Intensity Noise of Surface Grating Relief VCSELs
Molitor, Andreas et al. (2010)
Wissenschaftlicher Artikel
Differential phase contrast 2.0-Opening new "fields" for an established technique
Lohr, Matthias et al. (2012)
Wissenschaftlicher Artikel
Analysis of indium incorporation in non-and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties
Jönen, H. et al. (2012)
Wissenschaftlicher Artikel
AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency
Gutt, Richard et al. (2012)
Wissenschaftlicher Artikel