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Top surface-emitting vertical-cavity laser diodes for 10-Gb/s data transmission
Fiedler, U et al. (1996)
Wissenschaftlicher Artikel
Oxidised GaAs QW vertical-cavity lasers with 40% power conversion efficiency
Weigl, B et al. (1996)
Wissenschaftlicher Artikel
Determination of the dislocation densities in GaN on c-oriented sapphire
Pelzmann, A et al. (1996)
Wissenschaftlicher Artikel
High power top-surface emitting oxide confined vertical-cavity laser diodes
Grabherr, M et al. (1996)
Wissenschaftlicher Artikel
Delayed self-heterodyne linewidth measurement of VCSEL's
Schmid, W et al. (1996)
Wissenschaftlicher Artikel
Spectrally resolved near-field mode imaging of vertical cavity semiconductor lasers
Horsch, I et al. (1996)
Wissenschaftlicher Artikel
Bias-free 1 Gbit/s data transmission using singlemode GaAs VCSELs at lambda=835 nm
Schnitzer, P et al. (1996)
Wissenschaftlicher Artikel
Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
Teisseyre, H et al. (1996)
Wissenschaftlicher Artikel
Efficient vertical cavity surface emitting laser diodes for high bit rate optical data transmission
Ebeling, Karl Joachim et al. (1996)
Wissenschaftlicher Artikel
Performance characteristics of vertical-cavity semiconductor laser amplifiers
Wiedenmann, D et al. (1996)
Wissenschaftlicher Artikel