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Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
Aschenbrenner, Timo et al. (2016)
Wissenschaftlicher Artikel
Influence of trench period and depth on MOVPE grown (11(2)over-bar2) GaN on patterned r-plane sapphire substrates.
Caliebe, Marian et al. (2016)
Wissenschaftlicher Artikel
Stacking fault emission in GaN: Influence of n-type doping
Hocker, Matthias et al. (2016)
Wissenschaftlicher Artikel
Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence
Hocker, Matthias et al. (2016)
Wissenschaftlicher Artikel
High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes
Quan, Zhiheng et al. (2016)
Wissenschaftlicher Artikel
Efficiency studies on semipolar GaInN-GaN quantum well structures
Scholz, Ferdinand; Meisch, Tobias; Elkhouly, Karim (2016)
Wissenschaftlicher Artikel
Semipolar GaN-based heterostructures on foreign substrates
Scholz, Ferdinand et al. (2016)
Wissenschaftlicher Artikel
EBIC investigations on polar and semipolar InGaN LED structures
Knab, Manuel et al. (2016)
Wissenschaftlicher Artikel
Internal quantum efficiency and carrier injection efficiency of c-plane, 10(1)over-bar1 and 11(2)over-bar2 InGaN/GaN-based-light-emitting diodes
Wang, Junjun et al. (2016)
Wissenschaftlicher Artikel
Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire
Metzner, Sebastian et al. (2016)
Wissenschaftlicher Artikel