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1.09-EV SCHOTTKY-BARRIER HEIGHT OF NEARLY IDEAL PT/AU CONTACTS DIRECTLY DEPOSITED ON N-AL0.48IN0.52AS AND P+N-AL0.48IN0.52AS LAYERS
Fricke, A et al. (1994)
Wissenschaftlicher Artikel
Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime
Grabherr, M et al. (1997)
Wissenschaftlicher Artikel
High-power VCSEL's: Single devices and densely packed 2-D-arrays
Grabherr, M et al. (1999)
Wissenschaftlicher Artikel
Bottom-emitting VCSEL's for high-CW optical output power
Grabherr, M et al. (1998)
Wissenschaftlicher Artikel
FEEDBACK POWER PENALTY IN 1-GBIT/S SINGLEMODE FIBER TRANSMISSION WITH BUTT COUPLED VCSEL SOURCE
Fiedler, U et al. (1994)
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Oxidised GaAs QW vertical-cavity lasers with 40% power conversion efficiency
Weigl, B et al. (1996)
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Long monolithic cavity VCSELs for high singlemode output power
Unold, HJ et al. (2001)
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Top surface-emitting vertical-cavity laser diodes for 10-Gb/s data transmission
Fiedler, U et al. (1996)
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Polarisation control in VCSELs by elliptic surface etching
Unold, HJ et al. (2002)
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Numerical simulation of broad-area high-power semiconductor laser amplifiers
Dai, Z et al. (1997)
Wissenschaftlicher Artikel