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Influence of trench period and depth on MOVPE grown (11(2)over-bar2) GaN on patterned r-plane sapphire substrates.
Caliebe, Marian et al. (2016)
Wissenschaftlicher Artikel
Efficiency studies on semipolar GaInN-GaN quantum well structures
Scholz, Ferdinand; Meisch, Tobias; Elkhouly, Karim (2016)
Wissenschaftlicher Artikel
Semipolar GaN-based heterostructures on foreign substrates
Scholz, Ferdinand et al. (2016)
Wissenschaftlicher Artikel
Internal quantum efficiency and carrier injection efficiency of c-plane, 10(1)over-bar1 and 11(2)over-bar2 InGaN/GaN-based-light-emitting diodes
Wang, Junjun et al. (2016)
Wissenschaftlicher Artikel
Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire
Metzner, Sebastian et al. (2016)
Wissenschaftlicher Artikel
Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope
Mueller, Marcus et al. (2016)
Wissenschaftlicher Artikel
Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells
Leute, Robert A. R. et al. (2016)
Wissenschaftlicher Artikel
Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices
Buss, Ernst Ronald et al. (2016)
Wissenschaftlicher Artikel
Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells
Langer, Torsten et al. (2016)
Wissenschaftlicher Artikel
Doping behavior of (11(2)over-bar2) GaN grown on patterned sapphire substrates
Meisch, Tobias et al. (2016)
Wissenschaftlicher Artikel