Now showing items 1-10 of 568
On hypergeometric systems of differential equations
This thesis is about the hypergeometric system of differential equations. Until now, fundamental solutions for this system are just known in dimension 2 and very special cases in higher dimension. In dimension 2 it is ...
InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
Interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InCaAs-InP material system have been the subject of keen research over the past couple of years for use in long wavelength ...
Correct configuration of process variants in Provop
When engineering process-aware information systems (PAISs) one of the fundamental challenges is to cope with the variability of business processes. While some progress has been achieved regarding the configuration of process ...
Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors
A new approach to the modeling of frequency dispersion effects encountered in the drain current characteristics of state-of-the-art hetero field-effect transistors is presented. The empirical, equivalent-circuit based model ...
Monolithic integration of a folded dipole antenna with a 24-GHz receiver in SiGe HBT technology
The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-µm SiGe HBT process is presented. A high-resistivity silicon substrate (1000 cm) is used for the implemented circuit ...
Fully integrated millimeter-wave VCO with 32 % tuning range
In this paper, the authors present a fully integrated VCO with 32 % tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 µm Si/SiGe HBT technology with fT and fmax of 80 ...
Compact SiGe HBT low noise amplifiers for 3.1 - 10.6 GHz ultra-wideband applications
Two compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4 dB at 7 GHz and below 2.9 dB in the UWB bandwidth from 3.1 GHz up to ...
A unified approach to charge-conservative capacitance modelling in HEMTs
The voltage dependence of high electron mobility transistor (HEMT) gate-source- and gate-drain-capacitance is described by a set of equations based on a unified charge-conservative model approach. The model is applied to ...
OMCVD grown InP/InGaAs heterojunction bipolar transistors
Design und 2D Kristallisation von organischen Liganden und Metallkomplexen für die Entwicklung neuer funktioneller Oberflächen
In this work molecules with catalytic and magnetic properties were used to structure and to functionalize surfaces. For this we used the simple but powerful technique of molecular self organisation which is employed since ...