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Testing the temperature limits of GaN-based HEMT devices

Wissenschaftlicher Artikel

Maier, David; Alomari, Mohammed; Grandjean, Nicolas; Carlin, Jean-Francois; Diforte-Poisson, Marie-Antoinette; Dua, Christian; Chuvilin, Andrey; Troadec, David; Gaquière, Christophe; Kaiser, Ute; Delage, Sylvain L.; Kohn, Erhard

The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility ...

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