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A 60 to 77 GHz switchable LNA in an RF-MEMS embedded BiCMOS technology
In this letter, a 60 to 77 GHz switchable low-noise amplifier is presented. The IC is realized in a radio frequency microelectro-mechanical systems embedded 0.25 µm SiGe-C BiCMOS technology. Measured results show that the ...
This article presented the possibilities of making microwave and mm-wave ICs more intelligent through a combination of established Si/SiGe BiCMOS technologies, which allow for complex ICs combining a multitude of high-speed ...