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InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of ...
MEMS SiGe technologies for advanced wireless communications
This paper shows the potentialities of merging the MEMS and micromachining with SiGe technologies in order to speed up the performances of the next generation of front ends in terms of flexibility, reconfigurability and ...
OMCVD grown InP/InGaAs heterojunction bipolar transistors
Fully integrated millimeter-wave VCO with 32 % tuning range
In this paper, the authors present a fully integrated VCO with 32 % tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 µm Si/SiGe HBT technology with fT and fmax of 80 ...
Compact SiGe HBT low noise amplifiers for 3.1 - 10.6 GHz ultra-wideband applications
Two compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4 dB at 7 GHz and below 2.9 dB in the UWB bandwidth from 3.1 GHz up to ...
A fully monolithic 3.1 - 10.6 GHz UWB Si/SiGe HBT impulse-UWB correlation receiver
A 3.1-to-10.6 GHz Impulse-UWB correlation receiver in a 0.8 um Si/SiGe HBT technology is presented. The fully monolithic receiver with 0.8 mm2 chip size comprises a low-noise amplifier with maximum noise figure of 3.2 dB, ...
Highly compact impulse UWB transmitter for high-resolution movement detection
In this paper the hybrid integration of a FCC-compliant fifth-order Gaussian derivative impulse generator IC together with a compact ultra-wideband Vivaldi antenna is presented. The setup results in a compact FCC-compliant ...
The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs
An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, ...
MEMS module integration into SiGe BiCMOS technology for embedded system applications
The introduction of radio frequency micro-electro-mechanical systems (RFMEMS) as a monolithic option into state-of-the-art Si/SiGe BiCMOS foundry processes has paved the way for single chip radio frequency microsystems at ...
Towards a highly flexible spectrum sensing platform for cognitive radio networks
Multi-nodal spectrum sensing is a promising approach to robust cognitive radio networks, which provides increased adaptability to database-anchored sharing approaches. Yet its commercially viable implementation requires ...