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Now showing items 1-10 of 13
Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs
Fikry, Mohamed et al. (2013)
Beitrag zu einer Konferenz
INGAN/GAN based semipolar green converters
Wang, Junjun et al. (2013)
Beitrag zu einer Konferenz
Development of semipolar (11-22) LEDs on GaN templates
Corbett, Brian et al. (2016)
Beitrag zu einer Konferenz
Improvements of MOVPE grown (11(2)over-bar2) oriented GaN on pre-structured sapphire substrates using a SiNx interlayer and HVPE overgrowth
Caliebe, Marian et al. (2014)
Beitrag zu einer Konferenz
High quality AlGaN epilayers grown on sapphire using SiNx interlayers
Forghani, Kamran et al. (2011)
Beitrag zu einer Konferenz
GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures
Leute, Robert A. R. et al. (2013)
Beitrag zu einer Konferenz
Effects of miscut of prestructured sapphire substrates and MOVPE growth conditions on (11(2)over-bar2) oriented GaN
Caliebe, Marian et al. (2015)
Beitrag zu einer Konferenz
Co-existence of harmonic generation and two-photon luminescence in selectively grown coaxial InGaN/GaN quantum wells on GaN pyramids
Butler, Sween et al. (2015)
Beitrag zu einer Konferenz
GaN tubes with coaxial non- and semipolar GaInN quantum wells
Heinz, Dominik et al. (2014)
Beitrag zu einer Konferenz
Crystal quality improvement of semipolar (20-21) GaN on patterned sapphire substrates by in-situ deposited SiN mask
Meisch, Tobias et al. (2014)
Beitrag zu einer Konferenz