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Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN 
Lamprecht, Matthias et al. (2017)
Beitrag zu einer Konferenz

Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs 
Fikry, Mohamed et al. (2013)
Beitrag zu einer Konferenz

INGAN/GAN based semipolar green converters 
Wang, Junjun et al. (2013)
Beitrag zu einer Konferenz

Functionalized GaN/GaInN heterostructures for hydrogen sulfide sensing 
Shahbaz, Jassim et al. (2019)
Beitrag zu einer Konferenz

Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation 
Schupp, Thorsten et al. (2011)
Beitrag zu einer Konferenz

GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures 
Leute, Robert A. R. et al. (2013)
Beitrag zu einer Konferenz

High quality AlGaN epilayers grown on sapphire using SiNx interlayers 
Forghani, Kamran et al. (2011)
Beitrag zu einer Konferenz

Development of semipolar (11-22) LEDs on GaN templates 
Corbett, Brian et al. (2016)
Beitrag zu einer Konferenz

Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN 
Feneberg, Martin et al. (2014)
Beitrag zu einer Konferenz

Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes 
Pristovsek, Markus et al. (2016)
Beitrag zu einer Konferenz

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