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InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
Interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InCaAs-InP material system have been the subject of keen research over the past couple of years for use in long wavelength ...
InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of ...
MEMS SiGe technologies for advanced wireless communications
This paper shows the potentialities of merging the MEMS and micromachining with SiGe technologies in order to speed up the performances of the next generation of front ends in terms of flexibility, reconfigurability and ...
OMCVD grown InP/InGaAs heterojunction bipolar transistors
Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors
A new approach to the modeling of frequency dispersion effects encountered in the drain current characteristics of state-of-the-art hetero field-effect transistors is presented. The empirical, equivalent-circuit based model ...
Monolithic integration of a folded dipole antenna with a 24-GHz receiver in SiGe HBT technology
The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-µm SiGe HBT process is presented. A high-resistivity silicon substrate (1000 cm) is used for the implemented circuit ...
Fully integrated millimeter-wave VCO with 32 % tuning range
In this paper, the authors present a fully integrated VCO with 32 % tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 µm Si/SiGe HBT technology with fT and fmax of 80 ...
Compact SiGe HBT low noise amplifiers for 3.1 - 10.6 GHz ultra-wideband applications
Two compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4 dB at 7 GHz and below 2.9 dB in the UWB bandwidth from 3.1 GHz up to ...
A unified approach to charge-conservative capacitance modelling in HEMTs
The voltage dependence of high electron mobility transistor (HEMT) gate-source- and gate-drain-capacitance is described by a set of equations based on a unified charge-conservative model approach. The model is applied to ...
A low-noise active receiving antenna using a SiGe HBT