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MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices
Kirchner, C et al. (2000)
Wissenschaftlicher Artikel
Oxide confined 2D VCSEL arrays for high-density inter/intra-chip interconnects
King, R et al. (1998)
Beitrag zu einer Konferenz
64 channel flip-chip mounted selectively oxidized GaAsVCSEL array for parallel optical interconnects
Jung, C et al. (1999)
Beitrag zu einer Konferenz
Device performance of ultra-violet emitting diodes grown by MBE
Mayer, M et al. (1998)
Beitrag zu einer Konferenz
Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
Kirchner, C et al. (1999)
Wissenschaftlicher Artikel
Large-area single-mode selectively oxidized VCSELs: Approaches and experimental
Unold, HJ et al. (2000)
Beitrag zu einer Konferenz
Dry etching of GaN substrates for high-quality homoepitaxy
Schauler, M et al. (1999)
Wissenschaftlicher Artikel
GaN based LED's with different recombination zones
Schauler, M et al. (1997)
Wissenschaftlicher Artikel
Increased-area oxidised single-fundamental mode VCSEL with self-aligned shallow etched surface relief
Unold, HJ et al. (1999)
Wissenschaftlicher Artikel
Highly efficient oxide-confined VCSEL arrays for parallel optical interconnects
Jung, C et al. (1999)
Beitrag zu einer Konferenz