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Photocurrent and photoluminescence measurements in the near-band-edge region of 6H GaN
Kornitzer, K et al. (1998)
Wissenschaftlicher Artikel
Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
Kirchner, C et al. (1999)
Wissenschaftlicher Artikel
Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance
Schwegler, V et al. (1999)
Beitrag zu einer Konferenz